MMBTA92 (100-200)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA92 SOT-23 TRANSISTOR (PNP) FEATURES 1. BASE 2. EMITTER 3. COLLECTOR High voltage transistor MARKING:2D MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Value Unit VCBO Symbol Collector-Base Voltage Parameter -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -200 mA ICM Collector Current -Pulsed -500 mA PC Collector Power Dissipation 300 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ RӨJA Thermal Resistance from Junction to Ambient 417 ℃/W ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC= -100μA, IE=0 -300 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -300 V Emitter-base breakdown voltage V(BR)EBO IE= -100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-200V, IE=0 -0.25 μA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 μA hFE(1) VCE= -10V, IC= -1mA 60 hFE(2) VCE= -10V, IC=-10mA 100 hFE(3) VCE= -10V, IC=-30mA 60 DC current gain 200 Collector-emitter saturation voltage VCE(sat) IC=-20mA, IB= -2mA -0.2 Base-emitter saturation voltage VBE(sat) IC= -20mA, IB= -2mA -0.9 Transition frequency fT VCE=-20V, IC= -10mA f=30MHz 50 V V MHz D,Nov,2012 MMBTA92 Typical Characteristics IC 70 (mA) IC hFE DC CURRENT GAIN IC -350uA -300uA 40 -250uA -200uA 30 -150uA 20 Ta=100℃ Ta=25℃ 100 -100uA 10 IB=-50uA COMMON EMITTER VCE= -10V 0 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE VCEsat —— 20 10 -0.1 24 -1 VCE (V) -10 -100 COLLECTOR CURRENT IC VBEsat —— -900 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) -500 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) —— COMMON EMITTER Ta=25℃ -400uA 50 hFE 1000 -450uA 60 COLLECTOR CURRENT VCE —— -500uA Ta=100 ℃ -100 Ta=25℃ IC IC Ta=25℃ -600 Ta=100 ℃ β=10 β=10 -50 -10 -0.1 -1 -10 COLLECTOR CURREMT IC -100 —— IC -1 -10 COLLECTOR CURREMT (mA) fT VBE -100 IC (mA) IC —— (MHz) 300 fT (mA) T =2 5℃ a TRANSITION FREQUENCY -10 T =1 00℃ a IC COLLECTOR CURRENT -300 -0.1 -50 -1 100 COMMON EMITTER VCE=-20V COMMON EMITTER VCE= -10V Ta=25℃ -0.1 -0 -300 -600 -900 10 -0.1 -1200 -1 100 Cob/Cib —— VCB/VEB (pF) COLLECTOR POWER DISSIPATION PC (mW) Ta=25 ℃ C 10 1 -0.1 Cob -1 REVERSE VOLTAGE -10 V (V) PC 350 f=1MHz IE=0/IC=0 Cib -10 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) CAPACITANCE -300 (mA) -20 —— IC -100 (mA) Ta 300 250 200 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) 150 D,Nov,2012